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Infrared Heating Lamp Electric Outdoor Patio Heater Infrared Carbon Tube Heater Quartz Heating Tube ...
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1456.

Infrared Heating Lamp Electric Outdoor Patio Heater Infrared Carbon Tube Heater Quartz Heating Tube ... Open Details in New Window [Aug 28, 2023]

Infrared Heating Lamp Electric Outdoor Patio Heater Infrared Carbon Tube Heater Quartz Heating Tube For Housing This is a Infrared Products Manufacturer. We produce many kinds of Infrared lamps and ...

Company: Huaian Yinfrared Heating Tech Co., Ltd.

2000W/3000W Infrared Wall-Mounted Electric Heater Outdoor Quartz Electric Infrared Patio Heater ...
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1457.

2000W/3000W Infrared Wall-Mounted Electric Heater Outdoor Quartz Electric Infrared Patio Heater ... Open Details in New Window [Aug 28, 2023]

2000W/3000W Infrared Wall-Mounted Electric Heater Outdoor Quartz Electric Infrared Patio Heater with Remote Control Electric Warmer This is a Infrared Products Manufacturer. We produce many kinds of Infrared lamps and ...

Company: Huaian Yinfrared Heating Tech Co., Ltd.

Insulated Gate Bipolar Transistor IGBT G30n60d to-247
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1458.

Insulated Gate Bipolar Transistor IGBT G30n60d to-247 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b
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1459.

6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Insulated Gate Bipolar Transistor IGBT G15n60d to-220f
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1460.

Insulated Gate Bipolar Transistor IGBT G15n60d to-220f Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 30 A Collector Current (Tc=100ºC) 15 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1700V IGBT Module Dgc75c170m2t
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1461.

1700V IGBT Module Dgc75c170m2t Open Details in New Window [Jun 25, 2025]

75A 1700V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2
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1462.

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 60 A Collector Current (TJ=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V 34mm Half Bridge IGBT Module
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1463.

75A 650V 34mm Half Bridge IGBT Module Open Details in New Window [Jun 23, 2025]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d
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1464.

40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247
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1465.

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40h65m2 to-247
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1466.

40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40h65m2 to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D
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1467.

60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L
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1468.

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220
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1469.

15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 15 A Pulsed Collector Current ICM 60 A Diode Continuous ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247
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1470.

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd