Jiangsu Profile
Product List
5296. Power Silicon Field Transistors N-Channel with Insulated Gate G10n10A Sop-8 100V 15A 
[Mar 25, 2021]
[Mar 25, 2021] Product Description POWER SILICON FIELD TRANSISTORS N-CHANNEL WITH INSULATED GATE G10N10A SOP-8 100V 15A Part Number G10N10A VDSS 100V ID 15A RDS 6.6mΩ @ vgs=10V Vth 1.9V Package SOP-8 Ciss 2808 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5297. 12n10g 100V 12A Mosfet Transistor To251/252 for MFG of Charger for Mobile [Mar 24, 2021]
[Mar 24, 2021] Product Description 12N10G 100V 12A MOSFET TRANSISTOR TO251/252 FOR MFG OF CHARGER FOR MOBILE Part Number 12N10G VDSS 100V ID 12A RDS 79mΩ @ vgs=10V Vth 1.8V Package TO-251/252 Ciss 690 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5298. N-CH Mosfet 30V 12A 8.3mohm Lead Free (TRANSISTOR) G16n03s Sop-8 [Mar 24, 2021]
[Mar 24, 2021] Product Description N-CH MOSFET 30V 12A 8.3mOhm LEAD free (TRANSISTOR) G16N03S SOP-8 Part Number G16N03S VDSS 30V ID 12A RDS 6.7 mΩ @ vgs=10V Vth 1.35V Package SOP-8 Ciss 950 pF Crss 160 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5299. 100V 50A Power Mosfet N-Channel Switching Transistor in a to-220 Package [Mar 22, 2021]
[Mar 22, 2021] Product Description 100V 50A Power Mosfet N-Channel Switching Transistor in a TO-220 package Part Number G50N10 VDSS 100V ID 50A RDS 14mΩ @ vgs=10V Vth 3V Package TO-220 Ciss 5320 pF Crss 360 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5300. Metal Oxide Semiconductor (MOS) Transistor in to-251 Package [Mar 22, 2021]
[Mar 22, 2021] Product Description Metal Oxide Semiconductor (MOS )transistor in TO-251 package Part Number 5N20A VDSS 200V ID 5A RDS 440mΩ @ vgs=10V Vth 1.55V Package TO-251 Ciss 255 pF Crss 2.3 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5301. Insulated-Gate Field Effect Transistors (MOSFET) for Switching Signal [Mar 22, 2021]
[Mar 22, 2021] Product Description Insulated-gate Field Effect Transistors (MOSFET) for switching signal Part Number G2003A VDSS 190V ID 3A RDS 430mΩ @ vgs=10V Vth 1.7V Package SOT-23-3 Ciss 580 pF Crss 3 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5302. G30n04D3 Mosfet for Power Switch RDS (ON) 11.3mΩ @ Vgs=4.5V [Mar 19, 2021]
[Mar 19, 2021] G30N04D3 Mosfet for power switch RDS(ON)11.3mΩ @ vgs=4.5V Product Description G30N04D3 Mosfet for power switch RDS(ON)11.3mΩ @ vgs=4.5V Part Number G30N04D3 VDSS 40V ID 30A RDS 11.3mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5303. 600V Mosfet 4n60A to-252 N-Channel 4A IC Transistor Laptop for LED Driver [Mar 19, 2021]
[Mar 19, 2021] Product Description 600V mosfet 4N60A TO-252 N-Channel 4A IC transistor laptop for Led driver Part Number 4N60A VDSS 600V ID 4A RDS 2Ω @ vgs=10V Vth 3V Package TO-252 Ciss 511 pF Crss 5.55 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5304. Professional Power Mosfet 4n60A N-Channel 600V Transistor Factory Directly [Mar 19, 2021]
[Mar 19, 2021] Product Description Professional Power Mosfet 4N60A N-Channel 600V Transistor Factory directly Part Number 4N60A VDSS 600V ID 4A RDS 2Ω @ vgs=10V Vth 3V Package TO-252 Ciss 511 pF Crss 5.55 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5305. (AO4264) Gt12n06s 60V 12A Silicon Triode Transistor Mosfet for Charger [Mar 19, 2021]
[Mar 19, 2021] Product Description (AO4264) Gt12n06s 60V 12A Silicon Triode Transistor Mosfet for charger Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, ...
Company: Wuxi Goford Semiconductor Co., Ltd.
5306. 1N4002 M2 SMA Rectifier diode [Aug 05, 2024]
[Aug 05, 2024] Product Description Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1 A FEATURES • For surface mounted applications • Low profile package ...
5307. 1N4006 M6 SMA Rectifier diode [Aug 05, 2024]
[Aug 05, 2024] Product Description Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1 A FEATURES • For surface mounted applications • Low profile package ...
5308. ABS26 Passivated Bridge Rectifiers diode [Aug 05, 2024]
[Aug 05, 2024] Product Description DESCRIPTION Plastic package has underwriters laboratory flammability classification 94V-0 Glass passivated chip junction Lead free in comply with EU RoHS 2011/65/EU directives Ideal for ...
5309. Passivated Bridge Rectifier diode ABS8 [Aug 05, 2024]
[Aug 05, 2024] Product Description FEATURES: Glass Passivated Chip Junction • Reverse Voltage - 100 to 1000 V • Forward Current - 0.8 A • High Surge Current Capability • Designed for Surface Mount ...
5310. Passivated Bridge Rectifier diode MB4S [Aug 05, 2024]
[Aug 05, 2024] Product Description FEATURES: Glass Passivated Chip Junction Reverse Voltage - 100 to 1000 V Forward Current - 0.8 A High Surge Current Capability Designed for Surface Mount Application • MECHANICAL ...
