Jiangsu Profile

Product List
3916. Converter Application Low Gate Charge Fet Transistor So-8 Mosfet P-CH 40V Vdss G07p04s with RoHS ISO
[Nov 17, 2021]

Product Description Converter application low gate charge FET Transistor SO-8 Mosfet P-CH 40V VDSS G07P04S Part Number G07P04S VDSS -40V ID -7A RDS 18mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3917. Single P-CH G6p06 with Package Sop-8 Power Transistor Electronic Components Mosfet with RoHS ISO
[Nov 17, 2021]

Product Description 5G Antenna applied discrete semiconductor pb free FET Mosfet G06P06 Part Number G6P06 VDSS -60V ID -4A RDS 80mΩ @ vgs=10V Vth -1.8V Package SOP-8 Ciss 976 pF Crss 30 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3918. Pb Free Hallogan Free RoHS Compliant Dpak Package P-CH 60V Transistor Mosfet G12p06
[Jul 22, 2021]

Product Description pb free hallogan free Rohs compliant DPAK package P-ch 60V Transistor Mosfet Part Number G12P06 VDSS -60V ID -12A RDS (typical) 80mΩ @ vgs=10V Vth -1.8V PD 27W Ciss ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3919. Emb12p04h Alternative Part G26p04 Single P CH Mosfet Vdss 40V Tsdson Dfn Package
[Jul 20, 2021]

Product Description EMB12P04H alternative part G26P04 Single P ch Mosfet vdss 40V TSDSON DFN package Part Number G26p04 VDSS -40V ID -26A RDS(on) 15mΩ @ vgs=4.5V RDS(on) 13mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3920. EMS Fet Transistor P Channel Mosfet 40V Vdss 15A 50mohm RDS (on) Dpak to-252 G15p04
[Jul 19, 2021]

Product Description EMS FET Transistor P channel Mosfet 40V VDSS 15A 50mohm Rds(on) DPAK TO-252 G15P04 Part Number G15p04 VDSS -40V ID -15A RDS(on) 50mΩ @ vgs=4.5V RDS(on) 28mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3921. SGS RoHS Certified High Current Load Protection 40V P Channel Trench Mosfet to-252
[Jul 19, 2021]

Product Description SGS Rohs certified high current load protection 40V P CHANNEL TRENCH MOSFET TO-252 Part Number G12p04 VDSS -40V ID -12A RDS(on) 34mΩ @ vgs=4.5V RDS(on) 23mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3922. LED Dimmer Usage Ao3422 Alternative G03n06 60V 3A Electronic Component Field Effect Transistor ...
[Apr 23, 2021]

Product Description Led dimmer usage AO3422 alternative G03N06 60V 3A Electronic Component Field Effect Transistor Mosfet Part Number 03N06 VDSS 60V ID 3A RDS 89mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3923. Field Transistor Type N Mosfet Power 1.7W Current Power 3A Voltage 60V 03n06 Sot-23-3L
[Mar 30, 2021]

Product Description Field Transistor Type N Mosfet Power 1.7W CURRENT POWER 3A VOLTAGE 60V Part number: 03N06 Package: SOT-23-3L Part Number 03N06 VDSS 60V ID 3A RDS 89mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3924. Mosfet Transistor Distribution Power 130W Drain Source Voltage 40V Drain Current 120A G120n04 ...
[Mar 30, 2021]

Product Description MOSFET Transistor Distribution power 130W Drain Source Voltage 40V Drain Current 120A Part Number: G120N04 Package: TO-251/252 Part Number G120N04 VDSS 40V ID 120A RDS 5.6mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3925. Field Effect Mosfet Sot-23-3 60V (D-S) 3A RDS (on) 81momega for Battery Switch
[Mar 19, 2021]

Product Description Field Effect Mosfet SOT-23-3 60V(D-S) 3A RDS(on) 81mOmega for battery switch Part Number 03N06 VDSS 60V ID 3A RDS 81mΩ @ vgs=4.5V Vth 1.35V Package SOT-23 Ciss 247 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3926. electronic components N-channel MOSFET JMTL3N10A SOT-23
[Jun 30, 2023]

Product Description Features 100V,3A RDS(ON) =180mR (Typ.) @ VGS =10V RDS(ON) =210mR (Typ.) @ VGS =4.5V High Density Cell Design for Ultra Low RDS(ON) Fully Characterized Avalanche Voltage and Current ...
3927. N-channel Enhancement Mode Power MOSFET JMTL3400A SOT-23
[Dec 26, 2022]

Product Description Features 30V,5.8A RDS(ON)< 26mΩ @ VGS =10V RDS(ON)< 32mΩ @ VGS =4.5V RDS(ON)< 50mΩ @ VGS =2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead ...
3928. N-channel MOSFET JMTL2N7002K SOT-23
[Dec 12, 2022]

Product Description Features VDS=60V, ID=0.3A RDS(ON) <2.8Ω @ VGS = 10V RDS(ON) <3.6Ω @ VGS = 5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...
3929. N-channel Enhancement Mode Power MOSFET 3003A PDFN3.3X3.3-8L
[Nov 01, 2022]

Product Description Features 30V,80A RDS(ON)<3.3mΩ @ VGS =10V RDS(ON)<6.5mΩ @ VGS =4.5V Advanced Trench Technology Provide Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...
3930. N-channel Enhancement Mode Power MOSFET JMTG4004A PDFN5x6-8L
[Sep 19, 2022]

Product Description Features 40V,100A RDS(ON)<3.5mΩ @ VGS = 10V RDS(ON)<5.4mΩ @ VGS = 4.5V Lead free and Green Device Available Excellent RDS(ON) and Low Gate Charge Lead free product is ...
