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Product List
3361. S24n40aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer 
[Dec 10, 2020]
[Dec 10, 2020] Die Size 0.61mm×0.61mm IF 750mA VR 40V VF1 0.6V IR 500μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3362. S24n20aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.61mm×0.61mm IF 750mA VR 20V VF1 0.47V IR 200μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3363. S68h60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.73mm×1.73mm IF 5A VR 60V IR 3μA VF 0.71V Tj 175ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3364. S26n20ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.14mm×1.14mm IF 2A VR 60V IR 25μA VF 0.63V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3365. S35n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.89mm×0.89mm IF 2A VR 60V IR 100μA VF 0.68V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3366. S32h100ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.81mm×0.81mm IF 1A VR 100V IR 5μA VF 0.85V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3367. S32n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.81mm×0.81mm IF 1A VR 60V IR 100μA VF 0.62V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3368. S32n40ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.81mm×0.81mm IF 1A VR 40V IR 100μA VF 0.52V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3369. S28n40byy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1A VR 40V IR 100μA VF 0.6V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3370. S26n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.66mm×0.66mm IF 1A VR 60V IR 100μA VF 0.68V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3371. Jtr0250b3/B4 4-Inch Triacs Thyristor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 2.5mm×2.5mm VDRM 600V VRRM 600V IT 6A ITSM 60A IGT(MAX.) 25/25/25/75mA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3372. Rgg Wirewound Resistor for PCB (RX27-5) [May 16, 2023]
[May 16, 2023] Characteristics of wirewound resistor: . Temperature coefficient: +/-300ppm/oC . Insulation resistance: >100M ohms . Load life (1000 hours): +/-2%, +0.05 ohm . Short-time overload: +/-2%, +0.05 ohm . Dielectric ...
Company: Changzhou Southern Electronic Element Factory Co., Ltd.
3373. Metal Oxide Film Resistor (MOF 1/2W, 1W, 2W, 3W) [Jan 20, 2025]
[Jan 20, 2025] Perfect oxide resistant and thermal stability; Perfect pulse, high frequency load; Temperature coefficient, wide rates power range; Power: 1/2W, 1W, 2W, 3W; Value: 1Ω -75K, 1Ω -100K, 1Ω -120K, ...
Company: Yancheng Hyde Electronics Co., Ltd.
3374. Jtr0320b4 4-Inch SCR Thyristor Chip/Silicon Wafer [Mar 02, 2022]
[Mar 02, 2022] Die Size 3.2mm×3.2mm VDRM 600V VRRM 600V IT 12A ITSM 120A IGT(MAX.) 30/50/50/70mA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
3375. 9014 5-Inch High Frequency Small Signal Transistor Chip Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 350μ m×350μ m BVCEO 50V BVCBO 80V BVEBO 8V hFE 60-700 VCE(sat) 0.3V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
