Jiangsu Profile
Product List
3121. Field Transistor Type N Mosfet Power 1.7W Current Power 3A Voltage 60V 03n06 Sot-23-3L 
[Mar 30, 2021]
[Mar 30, 2021] Product Description Field Transistor Type N Mosfet Power 1.7W CURRENT POWER 3A VOLTAGE 60V Part number: 03N06 Package: SOT-23-3L Part Number 03N06 VDSS 60V ID 3A RDS 89mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3122. Mosfet Transistor Distribution Power 130W Drain Source Voltage 40V Drain Current 120A G120n04 ... [Mar 30, 2021]
[Mar 30, 2021] Product Description MOSFET Transistor Distribution power 130W Drain Source Voltage 40V Drain Current 120A Part Number: G120N04 Package: TO-251/252 Part Number G120N04 VDSS 40V ID 120A RDS 5.6mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3123. Field Effect Mosfet Sot-23-3 60V (D-S) 3A RDS (on) 81momega for Battery Switch [Mar 19, 2021]
[Mar 19, 2021] Product Description Field Effect Mosfet SOT-23-3 60V(D-S) 3A RDS(on) 81mOmega for battery switch Part Number 03N06 VDSS 60V ID 3A RDS 81mΩ @ vgs=4.5V Vth 1.35V Package SOT-23 Ciss 247 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3124. electronic components N-channel MOSFET JMTL3N10A SOT-23 [Jun 30, 2023]
[Jun 30, 2023] Product Description Features 100V,3A RDS(ON) =180mR (Typ.) @ VGS =10V RDS(ON) =210mR (Typ.) @ VGS =4.5V High Density Cell Design for Ultra Low RDS(ON) Fully Characterized Avalanche Voltage and Current ...
3125. N-channel Enhancement Mode Power MOSFET JMTL3400A SOT-23 [Dec 26, 2022]
[Dec 26, 2022] Product Description Features 30V,5.8A RDS(ON)< 26mΩ @ VGS =10V RDS(ON)< 32mΩ @ VGS =4.5V RDS(ON)< 50mΩ @ VGS =2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead ...
3126. N-channel MOSFET JMTL2N7002K SOT-23 [Dec 12, 2022]
[Dec 12, 2022] Product Description Features VDS=60V, ID=0.3A RDS(ON) <2.8Ω @ VGS = 10V RDS(ON) <3.6Ω @ VGS = 5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...
3127. N-channel Enhancement Mode Power MOSFET 3003A PDFN3.3X3.3-8L [Nov 01, 2022]
[Nov 01, 2022] Product Description Features 30V,80A RDS(ON)<3.3mΩ @ VGS =10V RDS(ON)<6.5mΩ @ VGS =4.5V Advanced Trench Technology Provide Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...
3128. N-channel Enhancement Mode Power MOSFET JMTG4004A PDFN5x6-8L [Sep 19, 2022]
[Sep 19, 2022] Product Description Features 40V,100A RDS(ON)<3.5mΩ @ VGS = 10V RDS(ON)<5.4mΩ @ VGS = 4.5V Lead free and Green Device Available Excellent RDS(ON) and Low Gate Charge Lead free product is ...
3129. Dual P Channel 6616A 12V 16A Sop-8 Package Silicon Mosfet Power Transistor [Aug 19, 2022]
[Aug 19, 2022] Product Description Dual P Channel 6616A 12V 16A Sop-8 Package Silicon MOSFET Power Transistor Part Number 6616A VDSS -12 V ID -16 A RDS 17 mΩ @ vgs=10V Vth -0.7V Package SOP-8 Ciss 1740 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3130. 200V 18A 18n20 Mosfet for LED TV Backlight Driver [Aug 19, 2022]
[Aug 19, 2022] Product Description 200V 18A 18N20 mosfet for LED TV backlight driver Part Number 18N20 VDSS 200V ID 18A RDS 136 mΩ @ vgs=10V Vth 1~3V Package TO-252 Ciss 836 pF Crss 3.81 pF Datasheet You ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3131. 650V 11A High Voltage Gc11n65t Super Junction Mosfet for Solar Power [Aug 19, 2022]
[Aug 19, 2022] Product Description 650V 11A High Voltage GC11n65t super junction Mosfet for Solar Power Efficiency: Higher light load full load efficiency, ultra-low Rdson and Qg, effectively reduce loss; Low temperature ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3132. High Voltage 650V 11A to-220 Mosfet Transistor for Smart Module Junction Box [Aug 19, 2022]
[Aug 19, 2022] Product Description High Voltage 650V 11A to-220 Mosfet Transistor for Smart Module Junction Box Efficiency: Higher light load full load efficiency, ultra-low Rdson and Qg, effectively reduce loss; Low ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3133. N Channel Gc11n65t 650V 11A Transistor Integrated Circuits Sj Mosfet [Aug 19, 2022]
[Aug 19, 2022] Product Description N Channel Gc11n65t 650V 11A transistor integrated circuits SJ Mosfet Efficiency: Higher light load full load efficiency, ultra-low Rdson and Qg, effectively reduce loss; Low temperature ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3134. SMD Transistor Electronics 45p40 -40V -50A to-252 Mosfet (DMP4047SK3) [Aug 19, 2022]
[Aug 19, 2022] Product Description smd transistor electronics 45P40 -40V -50A TO-252 mosfet (DMP4047SK3) Part Number 45P40 VDSS -40V ID -50A RDS 9mΩ @ vgs=10V Vth -1.9V Package TO-252 Ciss 5020 pF Crss 374 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3135. 45p40 P Channel -40V -50A to-252 Power Mosfet Transistor with RoHS [Aug 19, 2022]
[Aug 19, 2022] Product Description 45P40 P channel -40V -50A TO-252 power Mosfet transistor with RoHS Part Number 45P40 VDSS -40V ID -50A RDS 9mΩ @ vgs=10V Vth -1.9V Package TO-252 Ciss 5020 pF Crss 374 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
