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20A 60V Low Vf Schottky Barrier Diode Hmbrd20r60 to-252

1441.

20A 60V Low Vf Schottky Barrier Diode Hmbrd20r60 to-252 Open Details in New Window [Jun 26, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 60 V RMS Reverse Voltage VR(RMS) 42 V DC Blocking Voltage VR 60 V Average Rectified Forward Current IF(AV) 20 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 600V Fast Recovery Diode Murf10fu60 to-220f-2L

1442.

10A 600V Fast Recovery Diode Murf10fu60 to-220f-2L Open Details in New Window [Jun 26, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 600V Fast Recovery Diode Murf1660CT to-220f

1443.

16A 600V Fast Recovery Diode Murf1660CT to-220f Open Details in New Window [Jun 26, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 600V Fast Recovery Diode Mur860CT to-220c

1444.

8A 600V Fast Recovery Diode Mur860CT to-220c Open Details in New Window [Jun 26, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 800V Fast Recovery Diode Murf1080 to-220f-2L

1445.

10A 800V Fast Recovery Diode Murf1080 to-220f-2L Open Details in New Window [Jun 26, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V Low Schottky Barrier Diode Mbr20r100CT to-220

1446.

20A 100V Low Schottky Barrier Diode Mbr20r100CT to-220 Open Details in New Window [Jun 26, 2026]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.64 max 0.73 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 100V Schottky Barrier Diode Mbr16100CT to-220

1447.

16A 100V Schottky Barrier Diode Mbr16100CT to-220 Open Details in New Window [Jun 26, 2026]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 8 IF(A) Dual chip package 16 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 200V Fast Recovery Diode Mur1620CT to-252

1448.

16A 200V Fast Recovery Diode Mur1620CT to-252 Open Details in New Window [Jun 26, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 150V Schottky Barrier Diode Mbr40150CT to-263

1449.

40A 150V Schottky Barrier Diode Mbr40150CT to-263 Open Details in New Window [Jun 26, 2026]

SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V Low Schottky Barrier Diode Mbr30r100CT to-220

1450.

30A 100V Low Schottky Barrier Diode Mbr30r100CT to-220 Open Details in New Window [Jun 26, 2026]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.68 max 0.73 IF(A) Single chip package 15.0 IF(A) Dual chip package 30.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 400V Fast Recovery Diode Mur1540 to-220-2L

1451.

15A 400V Fast Recovery Diode Mur1540 to-220-2L Open Details in New Window [Jun 26, 2026]

SYMBOL RATING VBR (V) Min 400 typ 450 IR(uA)25ºC max 20 VF (V) 25ºC typ. 1.2 max 1.4 IF(A) Single chip package 7.5 IF(A) Dual chip package 15 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 600V Fast Recovery Diode Mur2060CT to-220

1452.

20A 600V Fast Recovery Diode Mur2060CT to-220 Open Details in New Window [Jun 26, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

70A 200V Fast Recovery Diode Mur7020DCT to-3p

1453.

70A 200V Fast Recovery Diode Mur7020DCT to-3p Open Details in New Window [Jun 26, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode Mur60g30nct to-3pn

1454.

60A 300V Fast Recovery Diode Mur60g30nct to-3pn Open Details in New Window [Jun 26, 2026]

Features Low forward voltage drop Glass Passivated Die Construction Low leakage current High reliability High forward surge current capability Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 200V Fast Recovery Diode Mur80fu20dcs to-3pn

1455.

80A 200V Fast Recovery Diode Mur80fu20dcs to-3pn Open Details in New Window [Jun 26, 2026]

Features Low forward voltage drop Glass Passivated Die Construction Low leakage current High reliability High forward surge current capability Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd