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3031. Irf640fp Replacement 200V 18A to-220f Mosfet Transistor for UPS 
[Jun 10, 2022]
[Jun 10, 2022] IRF640FP Replacement 200V 18A TO-220F MOSFET Transistor for UPS General Description The 18N20F uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3032. Free Sample Mosfet 100V 10A to-252 for LED Lighting Application [Jun 10, 2022]
[Jun 10, 2022] Free Sample MOSFET 100V 10A TO-252 for LED Lighting Application General Description The G10N10A-252 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3033. New Original Transistor 20n06 60V 20A N-Channnel to-252 Mosfet for Motor Control [May 27, 2022]
[May 27, 2022] New Original Transistor 20N06 60V 20A N-Channnel TO-252 Mosfet for Motor Control General Description The 20N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3034. Original Power Mosfet Aod4286 Replacement G15n10c 100V 15A Mosfet with to-252 Package [May 27, 2022]
[May 27, 2022] Original Power MOSFET AOD4286 Replacement G15N10C 100V 15A MOSFET with TO-252 Package General Description The G15N10C uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3035. Mosfet Ao3438 Substitute 20V 6A N-Channel Mosfet with Sot-23 Package [May 27, 2022]
[May 27, 2022] MOSFET AO3438 Substitute 20V 6A N-channel Mosfet with SOT-23 Package General Description The 2300F uses advanced trench technology to achieve extremely low on-resistance. And fast switching speed and improved ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3036. Equivalent Transistor Fqd10n20L Substitute Mosfet of 200V 9A Dpak [May 21, 2022]
[May 21, 2022] Equivalent Transistor FQD10N20L Substitute MOSFET of 200V 9A DPAK General Description The 630A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3037. Electronic Component 30V 40A G40n03A Transistor Mosfetwith RoHS [Mar 18, 2022]
[Mar 18, 2022] Electronic Component 30V 40A G40N03A Transistor MOSFETwith ROHS General Description The G40N03A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3038. Original Package Electronic Components Gt55n06 60V 53A Power Transistor Mosfet [Aug 19, 2022]
[Aug 19, 2022] Product Description Original Package Electronic Components Gt55n06 60V 53A Power Transistor Mosfet Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3039. Power Mosfet 03n06 (SI2308BDS) 60V 3A N-Channel Sot-23-3 Transistor [Aug 19, 2022]
[Aug 19, 2022] Product Description Power mosfet 03N06 (SI2308BDS) 60V 3A N-Channel SOT-23-3 transistor Part Number 03N06 VDSS 60V ID 3A RDS 81mΩ @ vgs=4.5V Vth 1.35V Package SOT-23 Ciss 247 pF Crss 19.5 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3040. IC Transistor 3400 30V 5.6A Power Mosfet Module [Aug 19, 2022]
[Aug 19, 2022] Product Description IC Transistor 3400 30V 5.6A POWER MOSFET Module Part Number 3400 VDSS 30V ID 5.6A RDS 23 mΩ @ vgs=4.5V Vth 0.95V Package SOT-23 Ciss 820 pF Crss 77 pF Datasheet You ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3041. 3401 -30V -4.2A N-Channel Ao3407 Ao3401A Power Mosfet [Aug 19, 2022]
[Aug 19, 2022] Product Description 3401 -30V -4.2A N-Channel AO3407 AO3401A power mosfet Part Number 3401 VDSS -30V ID -4.2A RDS 51mΩ @ vgs=4.5V Vth 0.9V Package SOT-23 Ciss 950 pF Crss 75 pF Datasheet You ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3042. Mosfet Irfp150n Replacement G50n10 100V 50A to-220 for DC/DC [Jun 23, 2022]
[Jun 23, 2022] MOSFET IRFP150N Replacement G50N10 100V 50A TO-220 for DC/DC General Description The G50N10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3043. STP20NF06L Replacement 20n06 to-220 N-CH 60V Mosfet for Motor [Jun 10, 2022]
[Jun 10, 2022] STP20NF06L Replacement 20N06 TO-220 N-Ch 60V MOSFET for Motor General Description The 20N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3044. Power Mosfet Manufacturer G3710 Irf3710z Irf3710 Equivalent Transistor with to-220 Package [Jun 10, 2022]
[Jun 10, 2022] Power MOSFET Manufacturer G3710 IRF3710Z IRF3710 Equivalent Transistor with TO-220 Package General Description The G3710 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3045. Gt090n06D52 Synchronous Rectification in SMPS or LED Driver 60V Sgt Mosfet [Aug 19, 2022]
[Aug 19, 2022] Product Description GT090N06D52 Synchronous Rectification in SMPS or LED Driver 60V SGT MOSFET Part Number GT090N06D52 VDSS 60V ID 40A RDS 6.5mΩ @ vgs=10V Vth 1.7V Package DFN5*6 Ciss 1620 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
