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140A 150V N-Channel Enhancement Mode Power Mosfet DSG070n15na to-220c

6166.

140A 150V N-Channel Enhancement Mode Power Mosfet DSG070n15na to-220c Open Details in New Window [Jun 26, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 99 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 135V N-Channel Enhancement Mode Power Mosfet DSG045n14n to-220c

6167.

180A 135V N-Channel Enhancement Mode Power Mosfet DSG045n14n to-220c Open Details in New Window [Jun 26, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet DTG045n04na to-220c

6168.

120A 40V N-Channel Enhancement Mode Power Mosfet DTG045n04na to-220c Open Details in New Window [Jun 26, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

33A 60V N-Channel Enhancement Mode Power Mosfet Dhf60n06 to-220f

6169.

33A 60V N-Channel Enhancement Mode Power Mosfet Dhf60n06 to-220f Open Details in New Window [Jun 26, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 33 A (T=100ºC) 22 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04b to-251

6170.

120A 40V N-Channel Enhancement Mode Power Mosfet Dhs021n04b to-251 Open Details in New Window [Jun 26, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263

6171.

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263 Open Details in New Window [Jun 26, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263

6172.

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263 Open Details in New Window [Jun 26, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263

6173.

120A 40V N-Channel Enhancement Mode Power Mosfet Dte043n04na to-263 Open Details in New Window [Jun 26, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 100A 60V N-Channel Enhancement Mode Power Mosfet Dh065n06D to-252

6174.

Hot Sale 100A 60V N-Channel Enhancement Mode Power Mosfet Dh065n06D to-252 Open Details in New Window [Jun 26, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 60A 100V N-Channel Enhancement Mode Power Mosfet 60n10 to-220

6175.

Hot Sale 60A 100V N-Channel Enhancement Mode Power Mosfet 60n10 to-220 Open Details in New Window [Jun 26, 2026]

PARAMETER SYMBOL VALUE UNIT 60N10/I60N10/E60N10/B60N10/D60N10 F60N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85D to-252

6176.

Hot Sale 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n85D to-252 Open Details in New Window [Jun 26, 2026]

PARAMETER SYMBOL VALUE UNIT DHS045N85/DHS045N85I/DHS045N85E/DHS045N85B/DHS045N85D DHS045N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 210A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03D to-252

6177.

Hot Sale 210A 30V N-Channel Enhancement Mode Power Mosfet Dh020n03D to-252 Open Details in New Window [Jun 26, 2026]

PARAMETER SYMBOL VALUE UNIT DH020N03/ Units DHI020N03/DHE020N03/DHB020N03/DHD020N03 DHF020N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 45A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100d to-252b

6178.

Hot Sale 45A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100d to-252b Open Details in New Window [Jun 26, 2026]

PARAMETER SYMBOL VALUE UNIT DHS160N100D Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 45 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 120A 40V N-Channel Enhancement Mode Power Mosfet Dh045n04D to-252

6179.

Hot Sale 120A 40V N-Channel Enhancement Mode Power Mosfet Dh045n04D to-252 Open Details in New Window [Jun 26, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 44 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 1 2 V EAS - - 280 mJ Ptot - - 120 W Rdson 4.2 - 5.5 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07

6180.

Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07 Open Details in New Window [Jun 26, 2026]

PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd