Jiangsu Profile
Product List
3661. 12A 100V N-Channel Enhancement Mode Power MOSFET DH1K1N10D TO-252B 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH1K1N10/ DH1K1N10E DH1K1N10B DH1K1N10D DH1K1 N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
3662. 25A 100V N-Channel Enhancement Mode Power MOSFET DHS250N10D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...
3663. Zhendi Supplier Double-Side Cooling SCR Thyristor for High Current Use and High Voltage Control [Jul 06, 2026]
[Jul 06, 2026] Product Description Phase Control Thyristor High-Temperature Resistance: Experience unparalleled reliability with the KP500a KP1000a KP2500a SCR Thyristor Module, designed to operate seamlessly across a vast ...
3664. Zhendi Wide Tempereture Range Fast Switching Gate Power Thyristor Kk800A 1200V/1800V Kk800A/1800V [Jun 22, 2026]
[Jun 22, 2026] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
3665. Zhendi Capsule Type SCR Phase Control Thyristors Kp 2000/2500A 6500V for Inverters [Jun 22, 2026]
[Jun 22, 2026] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
3666. Zhendi Kp600A Standard Recovery Diode 1800V-2400V Brand High Voltage Rectifier Diode [Jun 22, 2026]
[Jun 22, 2026] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
3667. Powerpassion Brand Low Switching Losses Fast Thyristor Module Mkc300/400/500 for Soft Start [Jun 22, 2026]
[Jun 22, 2026] Product Description Phase Control Thyristor High-Temperature Resistance: This KP500a KP1000a KP2500a SCR Thyristor Module operates within a wide temperature range of -40°C to 150°C, ensuring reliability and ...
3668. 160A 30V N-Channel Enhancement Mode Power MOSFET DH020N03P DFN5 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT DH020N03P Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 160 A (T=100ºC) 112 A Drain ...
3669. 145A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04P DFN5 [Jul 21, 2026]
[Jul 21, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 145 A (T=100ºC) 101 A Drain ...
3670. 80A 80V N-Channel Enhancement Mode Power MOSFET DH80N08 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
3671. 50A 60V N-Channel Enhancement Mode Power MOSFET DHF50N06 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
3672. 50A 60V N-Channel Enhancement Mode Power MOSFET DH50N06 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH50N06/DHI50N06/DHE50N06/DHB50N06/DHD50N06 DHF50N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
3673. 100A 68V N-Channel Enhancement Mode Power MOSFET DH060N07D TO-252 [Aug 09, 2026]
[Aug 09, 2026] Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features Fast ...
3674. 100A 30V N-Channel Enhancement Mode Power MOSFET DH033N03D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH033N03/DH033N03I/DH033N03E/DH033N03B/DH033N03D DH033N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
3675. 120A 100V N-Channel Enhancement Mode Power MOSFET DH10H055R TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH10H055R/DHI10H055R/DHE10H055R DHF10H055R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
