Jiangsu Profile
Product List
2596. 108A 100V N-Channel Enhancement Mode Power MOSFET DHS051N10P DFN5X6 
[Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 75 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 2 4 V EAS - - 620 mJ Ptot - - 180 W Rdson 2.6 - 3.3 mΩ ...
2597. 100A 60V N-Channel Enhancement Mode Power MOSFET DH066N06D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH066N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...
2598. 140A 150V N-Channel Enhancement Mode Power MOSFET DSG070N15NA TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 140 A (T=100ºC) 99 A Drain ...
2599. 15V Three-Terminal Positive Voltage Regulator IC 78M15A TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VI 35 V Output Current IO 1.0 V Thermal resistance junction-air RθJA 87 ºC/W Thermal resistance ...
2600. 120A 40V N-Channel Enhancement Mode Power MOSFET DHS021N04B TO-251 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 120 A Drain ...
2601. 47A 100V N-Channel Enhancement Mode Power MOSFET DH135N10P DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH135N10P Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 47 A (T=100ºC) 33 A Drain ...
2602. 18A 200V N-Channel Enhancement Mode Power MOSFET DH640 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH640/DHI640/DHE640 DHF640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2603. 180A 40V N-Channel Enhancement Mode Power MOSFET DHS020N04E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS020N04/DHS020N04I/ DHS020N04E DHS020N04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2604. 108A 85V N-Channel Enhancement Mode Power MOSFET DHS042N85P DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 85 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 1 2 V EAS - - 290 mJ Ptot - - 131 W Rdson 1.5 - 4.2 mΩ Features Fast ...
2605. 120A 40V N-Channel Enhancement Mode Power MOSFET DTG032N04N TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 117 A Drain ...
2606. 96A 40V N-Channel Enhancement Mode Power MOSFET DH033N04P DFN5X6 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 V ID (T=25ºC) - 96 A BVGSS ±20 V VTH 2 4 V EAS - - 256 mJ Ptot - - 105 W Features Fast Switching Low ON ...
2607. 130A 100V N-Channel Enhancement Mode Power MOSFET DHS130N10D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N10/DHS130N10I/DHS130N10E/DHS130N10B/DHS130N10D DHS130N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2608. 120A 40V N-Channel Enhancement Mode Power MOSFET DTG045N04NA TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...
2609. 80A 68V N-Channel Enhancement Mode Power MOSFET DH072N07D TO-252 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2610. 238A 60V N-Channel Enhancement Mode Power MOSFET DH026N06 TO-220 [Aug 09, 2026]
[Aug 09, 2026] Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 60 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 238 A ID(TC=100ºC) 167 A Pulsed Drain Current ...
