Jiangsu Profile
Product List
2371. 240A 60V N-Channel Enhancement Mode Power MOSFET DHS022N06 TO-220C 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS02 2N06/ DHS02 2N06E/ DHS02 2N06B/ DHS02 2N06D DHS02 2N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2372. 33A 60V N-Channel Enhancement Mode Power MOSFET DH240N06LD TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH240N06L/DH240N06LI/DH240N06LE/DH240N06LB/DH240N06LD DH240N06LF Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2373. 110A 100V N-Channel Enhancement Mode Power MOSFET DHS052N10D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS052N10/ DHS052N10I/ DHS052N10E/ DHS052N10B/ DHS052N10D DHS052N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2374. 150A 90V N-Channel Enhancement Mode Power MOSFET DH90N040R TO-220 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 90 - 98 V ID (T=25ºC) - - 150 A BVGSS ±20 V VTH 2 4 V EAS - - 196 mJ Ptot - - 189 W Rdson 4.0 - 4.9 mΩ ...
2375. 12A 100V N-Channel Enhancement Mode Power MOSFET DH850N10D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...
2376. 85A 60V N-Channel Enhancement Mode Power MOSFET DH066N06B TO-251 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ ...
2377. 70A 100V N-Channel Enhancement Mode Power MOSFET DHS160N100B TO-251 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2378. 105A 85V N-Channel Enhancement Mode Power MOSFET DHS056N85F TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS056N85/ DHS056N85I/DHS056N85E/ DHS056N85B/DHS056N85D DHS056 N85F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2379. 120A 40V N-Channel Enhancement Mode Power MOSFET DH033N04F TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH033N04 /DH033N04E DH033N04B/DH033N04D DH033N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2380. 174A 85V N-Channel Enhancement Mode Power MOSFET DHS030N88 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS030N88/DHS030N88E DHS030N88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2381. 145A 60V N-Channel Enhancement Mode Power MOSFET DH045N06D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2382. 120A 55V N-Channel Enhancement Mode Power MOSFET DH3205T TO-220C [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 55 - 62 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 2 4 V EAS - - 2100 mJ Ptot - - 320 W Rdson 6.8 - 8.0 mΩ ...
2383. 120A 40V N-Channel Enhancement Mode Power MOSFET DH045N04D TO-252 [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 - 44 V ID (T=25ºC) - - 120 A BVGSS ±20 V VTH 1 2 V EAS - - 280 mJ Ptot - - 120 W Rdson 4.2 - 5.5 mΩ ...
2384. 150A 30V N-Channel Enhancement Mode Power MOSFET DH025N03E TO-252& DH025N03E TO-263 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH025N03/DHI025N03/DHE025N03/DHB025N03/DHD025N03 DHF025N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
2385. 85A 68V N-Channel Enhancement Mode Power MOSFET DH065N07 TO-220 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH065N07/DHI065N07/DHE065N07 DHB065N07/DHD065N07 DHF065N07 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±25 V Drain ...
