Jiangsu Profile
Product List
19711. 120A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04f to-220f 
[Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DH033N04 /DH033N04E DH033N04B/DH033N04D DH033N 04F Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
19712. 180A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06 to-220c [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHS025N06/DHS025N06E Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 128 A Drain ...
19713. 120A 85V N-Channel Enhancement Mode Power Mosfet Dhs045n88d to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
19714. -50A -40V P-Channel Enhancement Mode Power Mosfet Dh160p04D to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -50 A (T=100ºC) -35 A Drain ...
19715. 240A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10 to-220c [Jun 25, 2025]
[Jun 25, 2025] Parameter SYMBOL VALUE UNIT DHS025N10/DHS025N10E DHS025N10D/ DHS025N10B Drian-to-Source Voltage BVDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain ...
19716. 35A 120V N-Channel Enhancement Mode Power Mosfet Dsd270n12n3 to-252b [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 35 A (Tc=100ºC) 22 A Drain ...
19717. Insulated Gate Bipolar Transistor IGBT G15n60d to-220f [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 30 A Collector Current (Tc=100ºC) 15 A Pulsed ...
19718. 21A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10ld to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS400N10LD DHS400N10LB Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
19719. 12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10b to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...
19720. 40A 100V N-Channel Enhancement Mode Power Mosfet Dhs180n10lad [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT FD70N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 40 A (T=100ºC) 28 A Drain ...
19721. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30CD to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH100P30C /DH100P30CE DH100P30CB/DH100P30CD DH100 P30CF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
19722. 47A 100V N-Channel Enhancement Mode Power Mosfet Dhs160n100f to-220f [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS160N100/DHS160N100I/DHS160N100E/DHS160N100B/DHS160N100D DHS160N100F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
19723. 20A 100V N-Channel Enhancement Mode Power Mosfet Dhs400n10d to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13 A Drain ...
19724. 210A 60V N-Channel Enhancement Mode Power Mosfet N6005 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT N6005/IN6005/EN6005 FN6005 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...
19725. 30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p28 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
