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Swg32 Copper Covered Aluminum Magnesium Wire/CCAM Wire for Electrical Wire
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18031.

Swg32 Copper Covered Aluminum Magnesium Wire/CCAM Wire for Electrical Wire Open Details in New Window [Jun 27, 2025]

Copper clad aluminum wire Diameter Specification : 0.08mm-5.0mm Our state-of-the air cladding and welding crafts guarantee the high density and conductivity of 99.97% purity copper cladding , while our ...

Company: Changzhou Capa New Materials Co., Ltd.

China SGS Certificated Copper Clad Aluminum Wire for Superfine Coaxial Cable Inner Conductor
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18032.

China SGS Certificated Copper Clad Aluminum Wire for Superfine Coaxial Cable Inner Conductor Open Details in New Window [Jun 27, 2025]

Copper clad aluminum wire(CCA wire) Diameter Specification : 0.08mm-5.0mm Our state-of-the air cladding and welding crafts guarantee the high density and conductivity of 99.97% purity copper cladding , while our ...

Company: Changzhou Capa New Materials Co., Ltd.

CCA Wire for Electrical and Cables
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18033.

CCA Wire for Electrical and Cables Open Details in New Window [Jun 27, 2025]

Copper clad aluminum wire Diameter Specification : 0.08mm-5.0mm Our state-of-the air cladding and welding crafts guarantee the high density and conductivity of 99.97% purity copper cladding , while our ...

Company: Changzhou Capa New Materials Co., Ltd.

China Small Diameter Copper Clad Steel Wire/CCS Wire Used for Braided Shield Wire
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18034.

China Small Diameter Copper Clad Steel Wire/CCS Wire Used for Braided Shield Wire Open Details in New Window [Jun 27, 2025]

Copper clad steel wire (CCS wire) Specification : 0.08mm-2.5mm CCS wire use the cladding or plating craft to make copper around the steel coil to create atom bonds between the two metals , it can be process like ...

Company: Changzhou Capa New Materials Co., Ltd.

China High Quality CCA Wire for RF Shielded   Cable Network
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18035.

China High Quality CCA Wire for RF Shielded   Cable Network Open Details in New Window [Jun 27, 2025]

Copper clad aluminum wire(CCA wire) Diameter Specification : 0.08mm-5.0mm Our state-of-the air cladding and welding crafts guarantee the high density and conductivity of 99.97% purity copper cladding , while our ...

Company: Changzhou Capa New Materials Co., Ltd.

2020 Wholesale with ISO Certificated Copper Coated Aluminum Wire
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18036.

2020 Wholesale with ISO Certificated Copper Coated Aluminum Wire Open Details in New Window [Jun 27, 2025]

Copper clad aluminum wire(CCA wire) Diameter Specification : 0.08mm-5.0mm Our state-of-the air cladding and welding crafts guarantee the high density and conductivity of 99.97% purity copper cladding , while our ...

Company: Changzhou Capa New Materials Co., Ltd.

China High Quality Tinned CCA Wire for Shielding Copper Braided Cover
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18037.

China High Quality Tinned CCA Wire for Shielding Copper Braided Cover Open Details in New Window [Jun 27, 2025]

Tinned Copper clad aluminum wire (TCCA wire) Diameter Specification : 0.12mm--0.80mm Tinned CCA wire is a new shielding materials which made of CCA inner conductor and Tin layer , the electric property and ...

Company: Changzhou Capa New Materials Co., Ltd.

Cat5e, CAT6, Cat3, Network Keystone Jack
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18038.

Cat5e, CAT6, Cat3, Network Keystone Jack Open Details in New Window [Jun 25, 2025]

FOCAN electronic factory producing All kind of Telephone and Network Accessories Telephone Connector, Telephone plug, Rj45 Connectors, Wired Jack, Pcb Plug, Pcb jack, connector, smt pcb jack, jack, telephone jack, ...

Company: FOCAN ELECTRONIC FACTORY

80A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06p Dfn5X6
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18039.

80A 60V N-Channel Enhancement Mode Power Mosfet Dhs065n06p Dfn5X6 Open Details in New Window [Jun 25, 2025]

PARAMETER SYMBOL VALUE UNIT DHS065N06P Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 86 A (T=100ºC) 55 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10u Toll Package
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18040.

180A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10u Toll Package Open Details in New Window [Jun 25, 2025]

Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 180 A ID(TC=100ºC) 115 A Pulsed Drain Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6
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18041.

96A 40V N-Channel Enhancement Mode Power Mosfet Dh033n04p Dfn5X6 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 40 V ID (T=25ºC) - 96 A BVGSS ±20 V VTH 2 4 V EAS - - 256 mJ Ptot - - 105 W Features Fast Switching Low ON ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

170A 30V N-Channel Enhancement Mode Power Mosfet Dhs010n03p Dfn5X6
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18042.

170A 30V N-Channel Enhancement Mode Power Mosfet Dhs010n03p Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

108A 85V N-Channel Enhancement Mode Power Mosfet Dhs042n85p Dfn5X6
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18043.

108A 85V N-Channel Enhancement Mode Power Mosfet Dhs042n85p Dfn5X6 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 85 V ID (T=25ºC) - - 108 A BVGSS ±20 V VTH 1 2 V EAS - - 290 mJ Ptot - - 131 W Rdson 1.5 - 4.2 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

96A 100V N-Channel Enhancement Mode Power Mosfet DSP051n10n Dfn5X6
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18044.

96A 100V N-Channel Enhancement Mode Power Mosfet DSP051n10n Dfn5X6 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 96 A (T=100ºC) 67 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

300A 100V N-Channel Enhancement Mode Power Mosfet Dsu021n10na
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18045.

300A 100V N-Channel Enhancement Mode Power Mosfet Dsu021n10na Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DSU021N10NA Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 210 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd