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Affordable Versatile Breaker Terminal for Power Distribution Needs
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15421.

Affordable Versatile Breaker Terminal for Power Distribution Needs Open Details in New Window [Jul 04, 2025]

Product Description Terminal Series is an important component used to achieve electrical connections. Usually made of metal materials with good conductivity, it has various appearances, such as columnar and flaky ...

Company: Suzhou Future Electrical Appliance Co., Ltd.

Black Battery Wire Harness with Good Temperature Acquisition for Electric Vehicle
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15422.

Black Battery Wire Harness with Good Temperature Acquisition for Electric Vehicle Open Details in New Window [Jul 02, 2025]

ODM OEM Black Battery Wire Harness With Good Temperature Acquisition For Electric Vehicle Product description: ODM OEM black battery wire harness with good temperature acquisition used are all electronic ...

Company: Jiangsu Shineplus Precision Technology Co., Ltd

Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07
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15423.

Hot Sale 105A 68V N-Channel Enhancement Mode Power Mosfet Dhs055n07 Open Details in New Window [Jul 02, 2025]

PARAMETER SYMBOL VALUE UNIT DHF85N06 Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 105 A (T=100ºC) 73.5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

China High Quality Tinned CCA Wire for Braidad Wire
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15424.

China High Quality Tinned CCA Wire for Braidad Wire Open Details in New Window [Jun 27, 2025]

Tinned Copper clad aluminum wire (TCCA wire) Diameter Specification : 0.12mm--0.80mm Tinned CCA wire is a new shielding materials which made of CCA inner conductor and Tin layer , the electric property and ...

Company: Changzhou Capa New Materials Co., Ltd.

China High Quality Tinned CCA Wire for Braiding Wire
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15425.

China High Quality Tinned CCA Wire for Braiding Wire Open Details in New Window [Jun 27, 2025]

Tinned Copper clad aluminum wire (TCCA wire) Diameter Specification : 0.12mm--0.80mm Tinned CCA wire is a new shielding materials which made of CCA inner conductor and Tin layer , the electric property and ...

Company: Changzhou Capa New Materials Co., Ltd.

100V 50A N-Mosfet Dsd190n10L3
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15426.

100V 50A N-Mosfet Dsd190n10L3 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06
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15427.

Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06 Open Details in New Window [Jun 23, 2025]

Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 60 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 238 A ID(TC=100ºC) 167 A Pulsed Drain Current ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263
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15428.

100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c
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15429.

Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263
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15430.

40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263
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15431.

130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252
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15432.

100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252 Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263
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15433.

135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c
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15434.

85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b
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15435.

100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd