Jiangsu Profile
Product List
8551. 60V 0.2A G2n7002e Sot-23 Power Dissipation 0.2W Max Mosfet Small Signal Transistor 
[Mar 24, 2021]
[Mar 24, 2021] 60V 0.2A G2N7002E SOT-23 power dissipation 0.2W max MOSFET SMALL SIGNAL TRANSISTOR Pb-free Halogen free RoHS Compliant Part Number G2N7002E VDSS 60V ID 0.2A RDS 2.2Ω @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8552. G2n7002e Mosfet N-CH 60V 0.2A S0t-23 (TRANSISTOR) Pb-Free RoHS [Mar 24, 2021]
[Mar 24, 2021] G2N7002E MOSFET N-CH 60V 0.2A S0T-23 (TRANSISTOR) Pb-free Halogen free RoHS Compliant Part Number G2N7002E VDSS 60V ID 0.2A RDS 2.2Ω @ vgs=4.5V Vth 1.65V Package SOT-23 Ciss 20 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8553. Rx24 Fixed Aluminum Shell Wire Wound Resistor [May 22, 2023]
[May 22, 2023] Aluminum Shell Underpan Installation Wire Wound Resistor (RX600) RX24(RX600) type alluminum shell underpan installating wire wound resistor scools the surface of a trench, large volume low-power high temperature, ...
Company: Changzhou Southern Electronic Element Factory Co., Ltd.
8554. Wirewound Power Variable Coating Tube Resistor with ISO9001 [May 16, 2023]
[May 16, 2023] Product description of Wirewound Power Variable Coating Tube Resistor with ISO9001 1. Professional resistor manufacturer. 2. Good overload resistor. 3. RoHS & ISO9001&ISO14000 4. OEM. Products Coated High Power ...
Company: Changzhou Southern Electronic Element Factory Co., Ltd.
8555. SA7.0A SA7.0CA Transient Voltage Suppressor Tvs Diode [Aug 05, 2024]
[Aug 05, 2024] Product Description DESCRIPTION The SA series of high current uni/bi-directional transient suppressors are designed for A.C. line protection and high power DC bus clamping applications. These devices offer ...
8556. Mosfet Manufacturer 03n06 60V 3A Mosfet for LED Lighting [Aug 19, 2022]
[Aug 19, 2022] Product Description MOSFET Manufacturer 03N06 60V 3A Mosfet for LED Lighting Part Number 03N06 VDSS 60V ID 3A RDS 81mΩ @ vgs=4.5V Vth 1.35V Package SOT-23 Ciss 247 pF Crss 19.5 pF Datasheet ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8557. Mosfet Manufacturer G10n10A 100V 10A to-252 Mosfet [Aug 19, 2022]
[Aug 19, 2022] Product Description MOSFET Manufacturer G10N10A 100V 10A TO-252 MOSFET Part Number G10N10A VDSS 100V ID 10A RDS 104mΩ @ vgs=10V Vth 1.8V Package TO-252 Ciss 690 pF Crss 90 pF Datasheet You ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8558. ISO9001 Certificate 60V 12A Sop-8 Mosfet for Fast Charger [Jun 23, 2022]
[Jun 23, 2022] ISO9001 Certificate 60V 12A SOP-8 MOSFET for Fast Charger General Description The GT12N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8559. Single P-CH G6p06 with Package Sop-8 Power Transistor Electronic Components Mosfet with RoHS ISO [Nov 17, 2021]
[Nov 17, 2021] Product Description 5G Antenna applied discrete semiconductor pb free FET Mosfet G06P06 Part Number G6P06 VDSS -60V ID -4A RDS 80mΩ @ vgs=10V Vth -1.8V Package SOP-8 Ciss 976 pF Crss 30 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8560. Gt12n06s Mosfet 60V 12A Sop-8 Mosfet for Fast Charger [Nov 13, 2023]
[Nov 13, 2023] GT12N06S MOSFET 60V 12A SOP-8 MOSFET for Fast Charger General Description The GT12N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8561. Discrete Component Gt025n06D5 Alternative 60V 95A Mosfet [Sep 28, 2022]
[Sep 28, 2022] Discrete Component GT025N06D5 Alternative 60V 95A Mosfet General Description The GT025N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8562. Discrete Component 2312 P Channel 20V 3A Mosfet for PWM Application [Sep 09, 2022]
[Sep 09, 2022] Discrete Component 2312 P Channel 20V 3A Mosfet for PWM Application General Description The 2312 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8563. Fqd12p10 Euivalent Transistor Mosfet of 100V 12A Dpak Package [Jun 20, 2022]
[Jun 20, 2022] FQD12P10 Euivalent Transistor MOSFET of 100V 12A DPAK Package General Description The G12P10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8564. Professional IC Mosfet Transistor 03n06 60V 3A with Sot-23-3L Package [Jun 10, 2022]
[Jun 10, 2022] Professional IC Mosfet Transistor 03N06 60V 3A with SOT-23-3L Package General Description The 03N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
8565. Power Mosfet Transistor Gt025n06D5 95A 60V Dfn Package Mosfet [May 21, 2022]
[May 21, 2022] Power Mosfet Transistor GT025N06D5 95A 60V DFN Package Mosfet General Description The GT025N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
