Jiangsu Profile
Product List
7576. Rx27-8b Ceramic Encased Wire Wound Resistor/Power Resistor 
[May 16, 2023]
[May 16, 2023] The product is used for braking resistance of ansducer. It features high power, strong anti-tmpacting apacity, easy installation, ect. rated power 50W resistance range 1-200Ω resistance ...
Company: Changzhou Southern Electronic Element Factory Co., Ltd.
7577. Vehicle Ceramic Resistor/Wire Wound Resistor [May 16, 2023]
[May 16, 2023] Vehicle Ceramic Resistor/Wire Wound Resistor Product Description: 1. Rated Power: 20W 2. Rated Resistance: 90-100Ω 3. Tolerance: ± 5% Specifications: 1. Professional engineer 2. Qualified ...
Company: Changzhou Southern Electronic Element Factory Co., Ltd.
7578. Wf Heat Melt Resistor/Special Function Resistor [May 16, 2023]
[May 16, 2023] We supply WF heat melt resistor and guarantee their quality. Advantage: 1. Competitive price 2. High stability and high quality 3. Prompt shipment Packing: We can pack your goods in export-worthy carton, on ...
Company: Changzhou Southern Electronic Element Factory Co., Ltd.
7579. 200W Vertical Square Aluminum Case Wire Wound Resistor/Power Resistor [May 16, 2023]
[May 16, 2023] Advantage: 1. Competitive price 2. High stability and high quality 3.prompt shipment Performance: Rating wattage:200W Resistance: 0.1~50Ω Resistance tolerance: ± 5%, ± 10% Insulation ...
Company: Changzhou Southern Electronic Element Factory Co., Ltd.
7580. SA7.0A SA7.0CA Transient Voltage Suppressor Tvs Diode [Aug 05, 2024]
[Aug 05, 2024] Product Description DESCRIPTION The SA series of high current uni/bi-directional transient suppressors are designed for A.C. line protection and high power DC bus clamping applications. These devices offer ...
7581. Mosfet Manufacturer G10n10A 100V 10A to-252 Mosfet [Aug 19, 2022]
[Aug 19, 2022] Product Description MOSFET Manufacturer G10N10A 100V 10A TO-252 MOSFET Part Number G10N10A VDSS 100V ID 10A RDS 104mΩ @ vgs=10V Vth 1.8V Package TO-252 Ciss 690 pF Crss 90 pF Datasheet You ...
Company: Wuxi Goford Semiconductor Co., Ltd.
7582. ISO9001 Certificate 60V 12A Sop-8 Mosfet for Fast Charger [Jun 23, 2022]
[Jun 23, 2022] ISO9001 Certificate 60V 12A SOP-8 MOSFET for Fast Charger General Description The GT12N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
7583. Single P-CH G6p06 with Package Sop-8 Power Transistor Electronic Components Mosfet with RoHS ISO [Nov 17, 2021]
[Nov 17, 2021] Product Description 5G Antenna applied discrete semiconductor pb free FET Mosfet G06P06 Part Number G6P06 VDSS -60V ID -4A RDS 80mΩ @ vgs=10V Vth -1.8V Package SOP-8 Ciss 976 pF Crss 30 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
7584. Gt12n06s Mosfet 60V 12A Sop-8 Mosfet for Fast Charger [Nov 13, 2023]
[Nov 13, 2023] GT12N06S MOSFET 60V 12A SOP-8 MOSFET for Fast Charger General Description The GT12N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
7585. Discrete Component Gt025n06D5 Alternative 60V 95A Mosfet [Sep 28, 2022]
[Sep 28, 2022] Discrete Component GT025N06D5 Alternative 60V 95A Mosfet General Description The GT025N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
7586. Discrete Component 2312 P Channel 20V 3A Mosfet for PWM Application [Sep 09, 2022]
[Sep 09, 2022] Discrete Component 2312 P Channel 20V 3A Mosfet for PWM Application General Description The 2312 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
7587. Fqd12p10 Euivalent Transistor Mosfet of 100V 12A Dpak Package [Jun 20, 2022]
[Jun 20, 2022] FQD12P10 Euivalent Transistor MOSFET of 100V 12A DPAK Package General Description The G12P10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
7588. Professional IC Mosfet Transistor 03n06 60V 3A with Sot-23-3L Package [Jun 10, 2022]
[Jun 10, 2022] Professional IC Mosfet Transistor 03N06 60V 3A with SOT-23-3L Package General Description The 03N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
7589. Power Mosfet Transistor Gt025n06D5 95A 60V Dfn Package Mosfet [May 21, 2022]
[May 21, 2022] Power Mosfet Transistor GT025N06D5 95A 60V DFN Package Mosfet General Description The GT025N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
7590. G180n03D5 30V 170A Aons66612t Substitute Mosfet with Dfn Package [Jun 14, 2022]
[Jun 14, 2022] G180N03D5 30V 170A AONS66612T Substitute MOSFET with DFN Package General Description The G180N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
