Jiangsu Profile
Product List
23041. Your Source for Aluminum Hydroxide Alh3o3 CAS 21645-51-2 
[Oct 22, 2026]
[Oct 22, 2026] Product Description Product Name: Aluminum hydroxide CAS: 21645-51-2 MF: AlH3O3 MW: 78 EINECS: 244-492-7 Melting point 300℃ Boiling point 2980℃[at 101 325 Pa] bulk density ~90g/100 mL density 2.42 g/cm3 at 20 °C Main ...
23042. Tricalcium Phosphate Food Grade Powder and Granular [Oct 21, 2026]
[Oct 21, 2026] Chemical Name: Tricalcium Phosphate .Molecular Formula:Ca3(PO4)2 Molecular Weight: 310.18 CAS:7758-87-4 5.Character: Mixture compound by different calcium phosphate. Its main component is 10CaO3P2O5· H2O. ...
Company: Lianyungang KANDS Chemical Co., Ltd.
23043. 4inch -12inch Pepper Salt Alumina Ceramic Grinder Metal Shaft Mechanism [Oct 21, 2026]
[Oct 21, 2026] Product Description Ceramic grinder Fast...giving a good speed to power ratio to allow rapid grinding at all coarseness levels...no one, it seems appreciates a slow grinder. Consistent....producing uniform particle size ...
23044. Precision CNC Machining Services for Automotive Steel and Aluminum Parts [Oct 23, 2026]
[Oct 23, 2026] PRODUCT PARAMETERS. Custom CNC machining is a precision subtractive manufacturing process. Computer-controlledtools (mils, lathes, routers) selectively remove material from solid blocks (metal, plastic, orcomposite) to ...
Company: Wuxi Gelanten Technology Co., Ltd.
23045. Hcds 99 999% High Purity Hexachlorodisilane for Semiconductor Ald and CVD [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
23046. Semiconductor Grade Hcds 5n Hexachlorodisilane Precursor for Ald CVD and Lpcvd [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
23047. Hexachlorodisilane Precursor 268 89 G/Mol Semiconductor Grade Hcds for Ald CVD [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
23048. Semiconductor Precursor Hexachlorodisilane 99 999% Hcds for Ald and Lpcvd [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
23049. 5n Hcds Hexachlorodisilane Semiconductor Precursor for Ald CVD Lpcvd Processes [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
23050. Hcds for Ald High Purity 99 999% Hexachlorodisilane Semiconductor Precursor [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
23051. 99 999% Semiconductor Grade Hcds Hexachlorodisilane Precursor for Ald and CVD [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
23052. Semiconductor Grade Hexachlorodisilane 5n Hcds for Lpcvd Deposition [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
23053. Hcds for CVD 5n Hexachlorodisilane Semiconductor Grade Precursor [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
23054. Hcds 99 999% Hexachlorodisilane Precursor for Semiconductor Ald Processes [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
23055. High Purity Hcds 268 89 G/Mol Hexachlorodisilane Semiconductor Precursor [Oct 23, 2026]
[Oct 23, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
