Jiangsu Profile
Product List
1051. 60A 200V Fast Recovery Diode Mur6020DCT to-3p 
[Aug 23, 2023]
[Aug 23, 2023] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1052. 180A 68V N-Channel Enhancement Mode Power Mosfet Dhs026n06e to-263 [Aug 23, 2023]
[Aug 23, 2023] SYMBOL VALUE UNIT Min Typ. Max BVDSS 68 - 75 V ID (T=25ºC) - - 180 A BVGSS ±20 V VTH 2 4 V EAS - - 1220 mJ Ptot - - 220 W Rdson 2.6 - 3.3 mΩ ...
1053. 740 to-220 10A 400V N-Channel Enhancement Mode Power Mosfet [Aug 23, 2023]
[Aug 23, 2023] PARAMETER SYMBOL VALUE UNIT 740/I740/E740/B740/D740 F740 Drian-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V Drain ...
1054. 40A 150V Schottky Barrier Diode Mbr40150CT to-263 [Aug 23, 2023]
[Aug 23, 2023] SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...
1055. 115A 100V N-Channel Enhancement Mode Power Mosfet D100n10 to-220 [Aug 23, 2023]
[Aug 23, 2023] PARAMETER SYMBOL VALUE UNIT D100N10/ID100N10/ED100N10 FD100N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±25 V Drain ...
1056. Dh065n06, to-220, 65A 60V N-Channel Enhancement Mode Power Mosfet [Aug 23, 2023]
[Aug 23, 2023] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 625 mJ Ptot - - 200 W Rdson 5.0 - 6.5 mΩ ...
1057. 18A 1200V N-Channel Sic Power Mosfet S18n120d [Aug 23, 2023]
[Aug 23, 2023] Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications Power Supplies High Voltage DC/DC Converters Motor Drives Switch Mode ...
1058. 45A 300V Fast Recovery Diode Mur4530dcs to-3p [Aug 23, 2023]
[Aug 23, 2023] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1059. 160A 90V N-Channel Enhancement Mode Power Mosfet Dhe90n035r to-263 [Aug 23, 2023]
[Aug 23, 2023] PARAMETER SYMBOL VALUE UNIT DH90N035R/DHI90N035R/DHE90N035R DHF90N035R Drian-to-Source Voltage VDSS 90 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1060. 150A 80V N-Channel Enhancement Mode Power Mosfet E150n08 to-263 [Aug 23, 2023]
[Aug 23, 2023] PARAMETER SYMBOL VALUE UNIT 150N08/I150N08/E150N08 F150N08 Maximum Drian-Source DC Voltage VDS 80 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...
1061. 60A 100V N-Channel Enhancement Mode Power Mosfet 60n10 to-220 [Aug 23, 2023]
[Aug 23, 2023] PARAMETER SYMBOL VALUE UNIT 60N10/I60N10/E60N10/B60N10/D60N10 F60N10 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1062. 20A 45V Schottky Barrier Diode Mbr2045CT to-220 [Aug 23, 2023]
[Aug 23, 2023] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
1063. 40A 45V Schottky Barrier Diode Mbr4045CT to-263 [Aug 23, 2023]
[Aug 23, 2023] SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...
1064. 30A 400V Fast Recovery Diode Mur3040CT to-263 [Aug 23, 2023]
[Aug 23, 2023] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
1065. 63A 60V N-Channel Enhancement Mode Power Mosfet Dh132n06 to-220c [Aug 23, 2023]
[Aug 23, 2023] PARAMETER SYMBOL VALUE UNIT DH132N06 Units DH132N06I/DH132N06E DH132N06B/DH132N06D DH132N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
