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1700V IGBT Module Dgc75c170m2t
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916.

1700V IGBT Module Dgc75c170m2t Open Details in New Window [Feb 26, 2024]

75A 1700V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

34mm 75A 1200V Half Bridge IGBT Module
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917.

34mm 75A 1200V Half Bridge IGBT Module Open Details in New Window [Feb 26, 2024]

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 1200V Fast Recovery Diode Mur30120 to-220-2L
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918.

30A 1200V Fast Recovery Diode Mur30120 to-220-2L Open Details in New Window [Dec 23, 2023]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 1500V Fast Recovery Diode Mur15150 to-220-2L
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919.

15A 1500V Fast Recovery Diode Mur15150 to-220-2L Open Details in New Window [Dec 23, 2023]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247
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920.

120A 1200V N-Channel Sic Power Mosfet Dcc016m120g2/Dccf016m120g2 to-247 Open Details in New Window [Dec 19, 2023]

115A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68A 1200V N-Channel Sic Power Mosfet Dccf040m120A2
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921.

68A 1200V N-Channel Sic Power Mosfet Dccf040m120A2 Open Details in New Window [Dec 09, 2023]

68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L
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922.

68A 1200V N-Channel Sic Power Mosfet Dccf080m120A2 to-247-4L Open Details in New Window [Oct 28, 2023]

68A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 40V P-Channel Enhancement Mode Power Mosfet DHD15p04 Sop-8
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923.

15A 40V P-Channel Enhancement Mode Power Mosfet DHD15p04 Sop-8 Open Details in New Window [Aug 22, 2023]

PARAMETER SYMBOL VALUE UNIT DHD15P04 Drian-to-Source Voltage VDSS -40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -15 A (T=100ºC) -12 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 1200V Fast Recovery Diode Mur75120 to-247-2L
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924.

75A 1200V Fast Recovery Diode Mur75120 to-247-2L Open Details in New Window [Aug 21, 2023]

SYMBOL RATING VBR (V) Min 1200 typ 1300 IR(uA)25ºC max 5.0 VF (V) 25ºC typ. 2.5 max 3.0 Trr (ns) typ. 70 max 100 IF(A) Single chip package 75 IF(A) Dual chip package - Features Low ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 100V Schottky Barrier Diode Mbr10100CT to-220 & Mbrf10100CT to-220f
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925.

10A 100V Schottky Barrier Diode Mbr10100CT to-220 & Mbrf10100CT to-220f Open Details in New Window [May 31, 2023]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

G45p02D3-Lt Package Dfn3.3*3.3-8L -20V Semiconductor Electronic Component Power Mosfet Transistor ...
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926.

G45p02D3-Lt Package Dfn3.3*3.3-8L -20V Semiconductor Electronic Component Power Mosfet Transistor ... Open Details in New Window [Nov 17, 2021]

PACKAGING &SHIPPING: 1. The order normally will be shipped within 3to7 working days upon the availability of the stock. If there is no enough stock, please check with us for the earliest shipment. 2. GOFORD ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Smcj8.0-Smcj8.0A Surface Mount Transient Voltage Suppressors Peak Pulse Power 1500W
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927.

Smcj8.0-Smcj8.0A Surface Mount Transient Voltage Suppressors Peak Pulse Power 1500W Open Details in New Window [Mar 21, 2024]

SMCJ5.0 thru 188CA Surface Mount Transient Voltage Suppressors Peak Pulse Power 1500W Stand-off Voltage 5.0 to 188V FEATURE Plastic package has Underwriters Laboratory Flammability Classification ...

Company: Changzhou Shunye Electronics Co., Ltd.

1n4148ws Fast Switching Diodes SOD-323
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928.

1n4148ws Fast Switching Diodes SOD-323 Open Details in New Window [Mar 21, 2024]

1N4148WS FAST SWITCHING DIODES FEATURE Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High ...

Company: Changzhou Shunye Electronics Co., Ltd.

25A, 50-1000V Soza Cell Diode Sc25A
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929.

25A, 50-1000V Soza Cell Diode Sc25A Open Details in New Window [Mar 21, 2024]

25A,50-1000V Soza Cell Diode SC25A 1.Datasheet: 2.Products list: Series Part No Max Rating and Electrical Characteristics VRWM IF IFSM (A)8.3ms single half VF ...

Company: Changzhou Shunye Electronics Co., Ltd.

25A, 50-1000V Soza Cell Diode Sc25m
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930.

25A, 50-1000V Soza Cell Diode Sc25m Open Details in New Window [Mar 21, 2024]

25A,50-1000V Soza Cell Diode SC25M 1.Datasheet: 2.Products list: Series Part No Max Rating and Electrical Characteristics VRWM IF IFSM (A)8.3ms single half VF ...

Company: Changzhou Shunye Electronics Co., Ltd.