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20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L
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151.

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dge20f65m2 to-263-3L Open Details in New Window [Apr 01, 2024]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L
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152.

20A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc20f65m2 to-247-3L Open Details in New Window [Dec 25, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247
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153.

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40h120m2 to-247 Open Details in New Window [Oct 09, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40h65m2 to-247
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154.

40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc40h65m2 to-247 Open Details in New Window [Oct 08, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b
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155.

6A 650V Trenchstop Insulated Gate Bipolar Transistor for Brushless Motor Dgd06f65m2 to-252b Open Details in New Window [Oct 08, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 12 A Collector Current (Tc=100ºC) 6 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D
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156.

60A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg60n65D Open Details in New Window [Aug 31, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 120 A Collector Current (Tc=100ºC) 60 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg50t65dlbbw
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157.

50A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg50t65dlbbw Open Details in New Window [Aug 30, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 50 A Pulsed Collector Current ICM 150 A Diode ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220
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158.

15A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg15t65dlbbf to-220 Open Details in New Window [Aug 30, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 15 A Pulsed Collector Current ICM 60 A Diode Continuous ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d
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159.

40A 1200V Trenchstop Insulated Gate Bipolar Transistor G40n120d Open Details in New Window [Aug 29, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 80 A Collector Current (TJ=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2
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160.

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgf30f65m2 Open Details in New Window [Aug 29, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(TJ=25ºC) 60 A Collector Current (TJ=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m
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161.

80A 650V Trenchstop Insulated Gate Bipolar Transistor Dgc80f65m Open Details in New Window [Aug 24, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 160 A Collector Current (Tc=100ºC) 80 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247
Contact Now

162.

40A 1200V Trenchstop Insulated Gate Bipolar Transistor Dgc40f120m2 to-247 Open Details in New Window [Aug 24, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V Trenchstop Insulated Gate Bipolar Transistor G40t65lbbn to-3pn
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163.

40A 650V Trenchstop Insulated Gate Bipolar Transistor G40t65lbbn to-3pn Open Details in New Window [Dec 12, 2023]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 650 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 80 A (T=100ºC) 40 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn40f65m2 to-3pn
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164.

40A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn40f65m2 to-3pn Open Details in New Window [Oct 26, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn30f65m2 to-3pn
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165.

30A 650V Trenchstop Insulated Gate Bipolar Transistor Dgn30f65m2 to-3pn Open Details in New Window [Oct 26, 2023]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd