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Converter Application Low Gate Charge Fet Transistor So-8 Mosfet P-CH 40V Vdss G07p04s with RoHS ISO
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301.

Converter Application Low Gate Charge Fet Transistor So-8 Mosfet P-CH 40V Vdss G07p04s with RoHS ISO Open Details in New Window [Nov 17, 2021]

Product Description Converter application low gate charge FET Transistor SO-8 Mosfet P-CH 40V VDSS G07P04S Part Number G07P04S VDSS -40V ID -7A RDS 18mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Single P-CH G6p06 with Package Sop-8 Power Transistor Electronic Components Mosfet with RoHS ISO
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302.

Single P-CH G6p06 with Package Sop-8 Power Transistor Electronic Components Mosfet with RoHS ISO Open Details in New Window [Nov 17, 2021]

Product Description 5G Antenna applied discrete semiconductor pb free FET Mosfet G06P06 Part Number G6P06 VDSS -60V ID -4A RDS 80mΩ @ vgs=10V Vth -1.8V Package SOP-8 Ciss 976 pF Crss 30 pF ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Pb Free Hallogan Free RoHS Compliant Dpak Package P-CH 60V Transistor Mosfet G12p06
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303.

Pb Free Hallogan Free RoHS Compliant Dpak Package P-CH 60V Transistor Mosfet G12p06 Open Details in New Window [Jul 22, 2021]

Product Description pb free hallogan free Rohs compliant DPAK package P-ch 60V Transistor Mosfet Part Number G12P06 VDSS -60V ID -12A RDS (typical) 80mΩ @ vgs=10V Vth -1.8V PD 27W Ciss ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Emb12p04h Alternative Part G26p04 Single P CH Mosfet Vdss 40V Tsdson Dfn Package
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304.

Emb12p04h Alternative Part G26p04 Single P CH Mosfet Vdss 40V Tsdson Dfn Package Open Details in New Window [Jul 20, 2021]

Product Description EMB12P04H alternative part G26P04 Single P ch Mosfet vdss 40V TSDSON DFN package Part Number G26p04 VDSS -40V ID -26A RDS(on) 15mΩ @ vgs=4.5V RDS(on) 13mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

EMS Fet Transistor P Channel Mosfet 40V Vdss 15A 50mohm RDS (on) Dpak to-252 G15p04
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305.

EMS Fet Transistor P Channel Mosfet 40V Vdss 15A 50mohm RDS (on) Dpak to-252 G15p04 Open Details in New Window [Jul 19, 2021]

Product Description EMS FET Transistor P channel Mosfet 40V VDSS 15A 50mohm Rds(on) DPAK TO-252 G15P04 Part Number G15p04 VDSS -40V ID -15A RDS(on) 50mΩ @ vgs=4.5V RDS(on) 28mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

SGS RoHS Certified High Current Load Protection 40V P Channel Trench Mosfet to-252
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306.

SGS RoHS Certified High Current Load Protection 40V P Channel Trench Mosfet to-252 Open Details in New Window [Jul 19, 2021]

Product Description SGS Rohs certified high current load protection 40V P CHANNEL TRENCH MOSFET TO-252 Part Number G12p04 VDSS -40V ID -12A RDS(on) 34mΩ @ vgs=4.5V RDS(on) 23mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

LED Dimmer Usage Ao3422 Alternative G03n06 60V 3A Electronic Component Field Effect Transistor ...
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307.

LED Dimmer Usage Ao3422 Alternative G03n06 60V 3A Electronic Component Field Effect Transistor ... Open Details in New Window [Apr 23, 2021]

Product Description Led dimmer usage AO3422 alternative G03N06 60V 3A Electronic Component Field Effect Transistor Mosfet Part Number 03N06 VDSS 60V ID 3A RDS 89mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Field Transistor Type N Mosfet Power 1.7W Current Power 3A Voltage 60V 03n06 Sot-23-3L
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308.

Field Transistor Type N Mosfet Power 1.7W Current Power 3A Voltage 60V 03n06 Sot-23-3L Open Details in New Window [Mar 30, 2021]

Product Description Field Transistor Type N Mosfet Power 1.7W CURRENT POWER 3A VOLTAGE 60V Part number: 03N06 Package: SOT-23-3L Part Number 03N06 VDSS 60V ID 3A RDS 89mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Mosfet Transistor Distribution Power 130W Drain Source Voltage 40V Drain Current 120A G120n04 ...
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309.

Mosfet Transistor Distribution Power 130W Drain Source Voltage 40V Drain Current 120A G120n04 ... Open Details in New Window [Mar 30, 2021]

Product Description MOSFET Transistor Distribution power 130W Drain Source Voltage 40V Drain Current 120A Part Number: G120N04 Package: TO-251/252 Part Number G120N04 VDSS 40V ID 120A RDS 5.6mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Field Effect Mosfet Sot-23-3 60V (D-S) 3A RDS (on) 81momega for Battery Switch
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310.

Field Effect Mosfet Sot-23-3 60V (D-S) 3A RDS (on) 81momega for Battery Switch Open Details in New Window [Mar 19, 2021]

Product Description Field Effect Mosfet SOT-23-3 60V(D-S) 3A RDS(on) 81mOmega for battery switch Part Number 03N06 VDSS 60V ID 3A RDS 81mΩ @ vgs=4.5V Vth 1.35V Package SOT-23 Ciss 247 ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Dual P Channel 6616A 12V 16A Sop-8 Package Silicon Mosfet Power Transistor
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311.

Dual P Channel 6616A 12V 16A Sop-8 Package Silicon Mosfet Power Transistor Open Details in New Window [Aug 19, 2022]

Product Description Dual P Channel 6616A 12V 16A Sop-8 Package Silicon MOSFET Power Transistor Part Number 6616A VDSS -12 V ID -16 A RDS 17 mΩ @ vgs=10V Vth -0.7V Package SOP-8 Ciss 1740 ...

Company: Wuxi Goford Semiconductor Co., Ltd.

200V 18A 18n20 Mosfet for LED TV Backlight Driver
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312.

200V 18A 18n20 Mosfet for LED TV Backlight Driver Open Details in New Window [Aug 19, 2022]

Product Description 200V 18A 18N20 mosfet for LED TV backlight driver Part Number 18N20 VDSS 200V ID 18A RDS 136 mΩ @ vgs=10V Vth 1~3V Package TO-252 Ciss 836 pF Crss 3.81 pF Datasheet You ...

Company: Wuxi Goford Semiconductor Co., Ltd.

650V 11A High Voltage Gc11n65t Super Junction Mosfet for Solar Power
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313.

650V 11A High Voltage Gc11n65t Super Junction Mosfet for Solar Power Open Details in New Window [Aug 19, 2022]

Product Description 650V 11A High Voltage GC11n65t super junction Mosfet for Solar Power Efficiency: Higher light load full load efficiency, ultra-low Rdson and Qg, effectively reduce loss; Low temperature ...

Company: Wuxi Goford Semiconductor Co., Ltd.

High Voltage 650V 11A to-220 Mosfet Transistor for Smart Module Junction Box
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314.

High Voltage 650V 11A to-220 Mosfet Transistor for Smart Module Junction Box Open Details in New Window [Aug 19, 2022]

Product Description High Voltage 650V 11A to-220 Mosfet Transistor for Smart Module Junction Box Efficiency: Higher light load full load efficiency, ultra-low Rdson and Qg, effectively reduce loss; Low ...

Company: Wuxi Goford Semiconductor Co., Ltd.

N Channel Gc11n65t 650V 11A Transistor Integrated Circuits Sj Mosfet
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315.

N Channel Gc11n65t 650V 11A Transistor Integrated Circuits Sj Mosfet Open Details in New Window [Aug 19, 2022]

Product Description N Channel Gc11n65t 650V 11A transistor integrated circuits SJ Mosfet Efficiency: Higher light load full load efficiency, ultra-low Rdson and Qg, effectively reduce loss; Low temperature ...

Company: Wuxi Goford Semiconductor Co., Ltd.